Spin Qubits

That author's affiliation: Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Madrid, Spain Institution (first & last author): University of Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France

Coupling semiconductor qubit devices to microwave resonators provides a way to transfer quantum information over long distances. A flopping-mode qubit that combines strong coupling to photons with good coherence properties has now been demonstrated.

Higher-order interactions in quantum harmonic oscillator systems can result in useful effects, but they are hard to engineer. An experiment on a single trapped ion now demonstrates how spin can mediate higher-order nonlinear bosonic interactions.

That author's affiliation: Stockholm University First author institution: Stockholm University Last author institution: Stanford University

We investigate the effect on a Quantum Hall (QH) liquid of its coupling to 3+1 dimensional dynamical electromagnetism, which renders the system gapless. We calculate both the Hall and longitudinal resistances, $\rho_H$ and $\rho_L$, in the context of a minimal model of the electromagnetic environment, with a small three dimensional conductivity ${\tilde{\sigma}}$, that allows for a counter-flow current. In the thermodynamic limit, we show that $\rho_H$ is quantized, while $\rho_L$ approaches a non-zero limit, $\rho_L \sim \alpha\, R_K$, where $\alpha$ and $R_K=2\pi /e^2$ are the fine structure and the Klitzing constant. In contrast, the QH conductance, $\sigma_H$, is smaller than the expected quantized value by a correction $\sim \alpha^2/R_K$. The electromagnetic interaction also generates corrections of order $\alpha^2$ to the quasiparticle charges and statistics, in a way that is consistent with general arguments based on gauge invariance. In addition, we present an intuitive argument that relates the flux attachment associated with the composite boson representation of the electron liquid to the empirically observed %persistence of approximate quantization of $\rho_H$, even in circumstances in which $\rho_L$, and the deviation of $\sigma_H$ from its quantized value, are substantial.

That author's affiliation: University of Manchester First author institution: University of Cambridge Last author institution: University of Manchester

We unveil that non-Abelian multigap band topology characterized by nontrivial Euler class invariants induces observable magnetononlinear Hall transport phenomena. We demonstrate these effects in a highly-tunable class of recently synthesized two-dimensional kagome N-heterocyclic carbene (NHC) metal-organic frameworks. We showcase the controllability of the nonlinear effect upon applying external voltage, changing temperature, and chemical substitutions that preserve the bulk topology and associated edge states. Our findings therefore reveal an uncharted presence of Euler class topology in metal-organic materials that can be experimentally deduced through measurable magnetotransport.

That author's affiliation: Indian Institute of Science Education and Research, Pune Institution (first & last author): Indian Institute of Science Education and Research, Pune

Bias dependent oscillations in excitonic photoluminescence are observed in a mixed dimensional 0D 2D heterostructure. These oscillations arise from modulation by oscillatory DC photocurrent, which exhibits periodic negative differential resistance, indicating recurring charge accumulation within the heterostructure. The persistence of these oscillations across a macroscopic area of diameter around 200 microns suggests the presence of periodically correlated quantum phenomena over large length scales. Furthermore, bias dependent oscillations in the photo capacitance are observed, reflecting a periodic ordering and disordering of excitonic populations. Together, these observations point to a direct competition between coherent and incoherent electron tunnelling processes. The coupled oscillatory behaviour of photoluminescence, photocurrent, and photo capacitance highlights new opportunities for exciton-based quantum optoelectronic devices.

Moir\'e superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moir\'e superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moir\'e filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moir\'e fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moir\'e wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moir\'e wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moir\'e superlattices.

That author's affiliation: International Centre for Theoretical Sciences First author institution: Indian Institute of Technology Kanpur Last author institution: Technion - Israel Institute of Technology

We investigate electronic transport across a junction between a Weyl semimetal (WSM) and a layered Chern insulator (LCI) in the presence of a magnetic field perpendicular to the interface. The topological mismatch between the gapless Weyl semimetal and the momentum-resolved chiral edge modes of the layered Chern insulator leads to interface Fermi-arc states with a qualitatively distinct connectivity: unlike WSM-WSM junctions, the interface Fermi arcs are forced to reconnect through the Brillouin-zone boundary rather than terminating at the projections of the Weyl nodes. We analyze the spectrum and compute the magneto tunnel conductance mediated by the interface-localized states. We find that the conductance increases linearly with magnetic field at low fields and saturates beyond a critical field to a constant value that is independent of microscopic details such as interface coupling, arc geometry, and lattice-scale parameters. This universal saturation reflects a transport mechanism governed by the topological charge pumping associated with the Chern layers, rather than magnetic breakdown between Fermi arcs. We further show that, under specific conditions, a junction between two distinct Weyl semimetals can exhibit a similar saturation behavior, thereby clarifying the topological origin of the observed universality.

That author's affiliation: QuTech Institution (first & last author): University of Wisconsin–Madison

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the typical control parameter for qubit applications, such energy splitting changes are typically negligible, both as measured in experiment and as assumed in effective theories. Here, we study the singlet-triplet (ST) splittings, which depend on the orbital splittings, of a double quantum dot (DQD) in a Ge/SiGe heterostructure using photon-assisted tunneling (PAT) and pulsed-gate spectroscopy. We find that the ST splittings have a surprising, strong dependence on the top gate voltages, leading to anomalous PAT measurements. We combine data from both measurements in a model that well describes the linear gate-voltage dependence of the ST splittings. Finally, we show that the ST splittings of the two dots exhibit similar linear gate-voltage dependences when the device is retuned such that their ratio is significantly different.

A robust zero-bias conductance peak in putative $p$-wave superconductors is often regarded as the primary signature of a Majorana zero mode. Yet similar features can also arise from trivial bound states. This ambiguity has limited the reliability of conventional spectroscopy as a diagnostic tool, raising a long-standing problem of how to detect such impostors. Here, we address this issue with an alternative approach, atomic-scale shot-noise spectroscopy, that goes beyond conductance measurements. Through a detailed investigation of multiple defect-bound zero-bias states in the widely studied superconductor Fe(Se,Te), we observe that differential conductance can exhibit an apparently `robust' zero-bias peak. However, shot-noise measurements consistently reveal the fingerprint of the individual particle- and hole character hidden in the tunnelling conductance, unambiguously exposing the trivial nature of the zero-bias peak. Our results establish shot-noise spectroscopy as a decisive diagnostic for ruling out false Majorana signatures in atomic-scale experiments.

Ten years after the experimental discovery of Weyl semimetals, theoretical and experimental work has pointed to the possibility of realizing surface-only superconductivity at relatively high temperatures in these materials. A consensus is developing that this unusual form of superconductivity is mediated by surface electronic states unique to Weyl semimetals, known as Fermi arcs. In this work, we show that the topological protection of these exotic states can be exploited to engineer high critical temperatures. Motivated by a real-material example (PtBi$_2$), we demonstrate that surface van Hove singularities can be induced by depositing a suitable additional layer on top of the Weyl surface. We also investigate the role of these singularities in raising the critical temperature, showing that it is significantly enhanced when the chemical potential lies in their vicinity. More generally, our results demonstrate how topological protection can be exploited to manipulate surface electronic states, thereby opening experimentally accessible routes toward engineering high-temperature two-dimensional superconductivity and other exotic phases.

Fractional quantum anomalous Hall (FQAH) effect, a lattice analogue of fractional quantum Hall effect, offers a unique pathway toward fault-tolerant quantum computation and deep insights into the interplay of topology and strong correlations. The exploration has been successfully guided by the paradigm of ideal flat Chern bands, which mimic Landau levels in both band topology and local quantum geometry. Yet, given the boundless potential for Bloch bands in lattice systems, it remains a significant open question whether FQAH states can arise in scenarios fundamentally distinct from this paradigm. Here we turn to a class of gapless flat bands, featuring (i) ill-defined band topology, (ii) non-quantized Berry flux, (iii) divergent quantum geometry at singular band touchings, (iv) highly fluctuating and far-from-ideal quantum geometry across the Brillouin zone (BZ). Our exact diagonalization and density matrix renormalization group calculations unambiguously demonstrate FQAH phase that is virtually independent of the interaction strength, persisting from the weak-interaction to the strong-interaction limit. We find the stability of the FQAH states does not uniquely correlate with the singularity strength or the BZ-averaged quantum geometric fluctuations. Instead, the many-body topological order can adapt to the singular and fluctuating quantum geometric landscape by spontaneously developing an inhomogeneous carrier distribution, while its quenching accompanies the drop in the occupation-weighted Berry flux. Our work reveals a profound interplay between local quantum geometry and many-body correlation, and significantly expands the exploration space for FQAH effect and correlated phenomena in general.

We study twisted bilayer WSe$_2$ within a continuum moir\'e model and introduce a method for treating finite geometries directly in the continuum framework, overcoming limitations associated with momentum-space formulations and Wannier obstructions. By projecting a confinement potential onto bulk moir\'e eigenstates, we obtain a real-space description of edge physics without lattice models. Applying this approach to nanoribbons, we demonstrate chiral edge modes consistent with bulk Chern numbers and reveal their moir\'e-scale character. In the magic-angle regime, these states are strongly localized, exhibit layer-polarized counter-propagating modes, and are electrically tunable via a displacement field, enabling control of localization, hybridization, and topological transitions. Our results establish a general framework for boundary physics in topological moir\'e materials.

High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the threshold are (4.2$\pm$0.3) $kW/cm^2$ and (6800$\pm$220). Increasing the pump level above two thresholds lead to an enlargement in the quality-factor to at least 19000. Efficient lateral heat dissipation in the planar semiconductor microcavity is confirmed by a low mode-energy shift of approximately 400 $\mu$eV at two lasing thresholds.

That author's affiliation: Saverna Therapeutics First author institution: Saverna Therapeutics Last author institution: King Fahd University of Petroleum and Minerals

We study quantum tunneling through a potential barrier whose height fluctuates in time and is modeled by Gaussian white noise. We map the stochastic dynamics onto an equivalent time-independent Lindblad equation for the density matrix, allowing fully analytical solutions. For Schr\"odinger particles, noise introduces dissipation that suppresses Fabry-P\'erot oscillations and yields an exponentially decaying transmission. Applying the same formalism to graphene, we demonstrate that noise induces a complex longitudinal wavevector within the barrier, leading to a strong suppression of transmission and Klein tunneling, even at normal incidence. Our approach promises improved control over Klein tunneling. These results demonstrate that noisy barriers can act as tunable dissipative elements, offering a pathway to enhanced control of electron transport in graphene-based devices. We also briefly discuss how our results could guide the design of graphene quantum dots for potential use in spin qubit devices.

That author's affiliation: Jagiellonian University Institution (first & last author): Jagiellonian University

Unlike for tunneling Josephson junctions, for which the current-phase relation is given by the sine function, with the critical current ($I_c$) and normal-state resistance ($R_N$) following the relation $I_cR_N=(\pi/2)\,\Delta_0/e$ (where $\Delta_0$ is the superconducting gap and electron charge is $-e$), mesoscopic Josephson junctions show more complex current-phase relations, with the skewness $S>0$, what is related to the presence -- in case the leads are in the normal state -- of transmission probabilities taking the values comparable to $1$. Here, we show that these features also appear for a superconductor-graphene-superconductor (S-g-S) junction in the disk-shaped (Corbino) geometry, when the magnetic field is adjusted such that $I_c\rightarrow{}0$ and $R_N\rightarrow{}\infty$. In such a case, the product $I_cR_N\approx{}1.85\,\Delta_0/e$, and the skewness $S\approx{}0.14$. The results obtained from quantum-mechanical mode-matching analysis for the Dirac-Bogoliubov-De-Gennes equation are compared with simpler model assuming incoherent scattering between two circular interfaces separating the sample and the leads.

We develop a theoretical framework for designing quantum couplers based on Dirac materials that can modulate the polarization of transmitted quasiparticles without significantly perturbing their propagation. We analyze in detail the conditions required for perfect transmission (Klein tunneling) together with controlled polarization transformation of the incoming states. We then discuss an explicit model of a quantum coupler composed of AA-stacked bilayer graphene nanoribbons with armchair edges and a localized interlayer interaction. Perfect transmission through the desired polarization channels is examined for both narrow and wide couplers. We show that the transmission of polarized states can be finely tuned by external fields.

That author's affiliation: Delft University of Technology First author institution: The Institute of the Polish Language of the Polish Academy of Sciences Last author institution: RWTH Aachen University

Charge separation from the $(4,0)$ to the $(3,1)$ state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was used in recent experiments involving creation of the $(3,1)$ singlet, and subsequent shuttling of one of the electrons. We present a theoretical description of the process of charge separation and singlet-triplet mixing, arriving at expressions for the singlet return probability that take into account experimentally observed finite probabilities of the creation of singlets with various patterns of valley occupations. In our analysis we focus on magnetic fields for which the electron spin Zeeman splitting is close to the valley splitting in one of the dots, when the spin-valley coupling causes a strong renormalization of the frequency of oscillations of singlet return probability. The latter effect has been recently used to perform valley splitting mapping by shuttling of one quantum dot to various locations with respect to the other. We give a detailed description of singlet-triplet dynamics near these spin-valley resonances and compare the results of calculations with measurements on double quantum dots in two distinct Si/SiGe heterostructures. Comparison of theory with experiments in which the presence of a few valley occupation patterns is visible, gives insight into the valley dependence of $g$-factors in these structures, providing support for a recently proposed theoretical model of this dependence. We also discuss how dephasing of singlet return probability oscillations near the spin-valley resonances is affected by valley splitting fluctuations caused by electric field noise.

Gatemon qubits are based on a superconductor-quantum dot-superconductor (S-QD-S) junction which enables in situ electrostatic tuning via a gate electrode. For a single-channel QD this structure gives rise to two subgap Andreev bound states (ABSs), and generally leads to a richer quantum phase dynamics as compared to conventional transmons. In a recent work [Phys. Rev. B 111, 214503 (2025)] we derived the quantum phase dynamics from a many-body treatment which leads to an effective gate voltage-dependent Hamiltonian that self-consistently incorporates the phase quantization. It predicts (i) a renormalization of the junction's effective capacitance and (ii) the presence of gate voltage and occupation-dependent charge offsets in junctions with tunneling asymmetry. Here, we quantify the observable impact of these effects on the qubit's energy spectrum and anharmonicity, by studying the interplay of the two Andreev branches as a function of dot-gate voltages and junction transparencies. We show the relation of these predictions to simplified gatemon models and propose a protocol to experimentally detect the predicted charge offsets.

Crystalline noble metal flakes are emerging as versatile platforms in nanophotonics, enabling a broad range of optical phenomena and applications. Their atomically flat surfaces, high crystallinity, and superior optical quality open new avenues in advanced plasmonics, quantum light generation, and hybrid photonic systems. In contrast to conventional polycrystalline metal films, which typically suffer from higher optical losses due to grain boundaries, surface roughness, and structural disorder, these monocrystalline flakes provide minimal scattering and enhanced performance. They serve as templates for precise nanostructuring through techniques like focused-ion beam (FIB) milling and are crucial for advanced applications in sensing and optoelectronics. Additionally, they facilitate frontier research in quantum plasmonics, enabling fundamental studies of nonlocal optical effects and the generation of nonclassical light. Furthermore, the well-defined $\{111\}$ facets of these flakes host Tamm--Shockley surface states that support 2D plasmons coexisting with bulk modes. At near-infrared wavelengths and beyond, crystalline flakes act as nearly ideal metallic mirrors, featuring surface roughness limited only to atomic terrace steps, making them highly suitable for integration with 2D materials in hybrid photonic architectures. This review surveys the key roles these flakes play, highlighting recent developments and discussing future prospects while emphasizing their unique benefits in addressing fundamental and applied challenges in modern nanophotonics.

Optical cavities play a central role in photonic and quantum technologies by enhancing light-matter interactions. In semiconductor microcavities, achieving high quality (Q) factors typically relies on sophisticated epitaxial growth techniques, such as molecular beam epitaxy, which offer atomic-scale precision but are costly and limited in material compatibility. For dielectric microcavities, high Q factors can be achieved using dielectric Bragg mirrors. However, conventional deposition techniques for the top mirrors, such as plasma-enhanced chemical vapor deposition or sputtering, can damage embedded emitters. This limitation is particularly severe for van der Waals materials, especially atomically thin semiconductors. Moreover, the conventional top-mirror deposition can cover or degrade predefined metal contacts. Recovering electrical access typically requires additional lithography and etching steps. Here, a deterministic dry-transfer approach is developed to fabricate complete dielectric microcavities using both top and bottom SiO_2/TiO_2 Bragg mirrors without post-growth lift-off processes, reaching a Q factor ~ 4x10^3. Using a WS_2 monolayer as the active medium, clear signatures of strong exciton-photon coupling are observed at both room temperature and cryogenic temperatures. These results demonstrate an efficient cavity fabrication approach that preserves the integrity of the emitter of layered materials, enabling next generation integrated photonic devices.

Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction, elevated-temperature operation, monolithic silicon integration, and telecom-wavelength compatibility remains a major challenge. Here, we demonstrate electrically contacted circular Bragg grating (eCBG) resonators incorporating InGaAs QDs directly grown on silicon, enabling bright single-photon emission in the telecom O-band. Deterministic electron-beam lithography and a ridge-based vertical p--i--n diode architecture enable precise device integration and electrical control of individual emitters. The QD--eCBGs exhibit a quantum-confined Stark shift of approximately 16 nm (11 meV) at 4 K, representing a record for QDs embedded in nanophotonic structures at telecom wavelengths. This is achieved alongside a photon extraction efficiency of $(21.7 \pm 3.0)\%$ into the first lens, while maintaining excellent radiative properties and high single-photon purity, with $g^{(2)}(0)=0.0078 \pm 0.0012$ below saturation and $g^{(2)}(0)=0.0183 \pm 0.0021$ at saturation under pulsed excitation. Robust antibunching persists up to 77 K, with $g^{(2)}(0)=0.0663 \pm 0.0056$, enabling operation with liquid-nitrogen or compact Stirling cryocoolers. Furthermore, spatially separated QD--eCBGs can be electrically tuned into spectral resonance without degrading photon statistics. These results establish a silicon-compatible, electrically addressable telecom O-band quantum light platform combining wide spectral tunability, high single-photon purity, and elevated-temperature operation, providing a scalable route toward practical photonic quantum networks.

We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high electron mobilities up to 7400 cm$^2$/V$\cdot$s. A large range of electron density was systematically explored by controlled aging of the sample between cooldowns, including the expected range for the STO 2DEG superconducting dome. No superconducting transition was observed down to the base temperature of approximately 10 mK. This suggests suppression of superconductivity in high mobility quasi-two-dimensional SrTiO$_3$ electron gas, likely linked to vertical confinement and electronic orbital rearrangement. We systematically explored electrostatic gate modulation in this 2DEG system and its scaling with electron density and side gate geometry. In contrast with our initial expectation, we observed an improvement of achievable total modulation for larger side gate to channel separation. At low electron density, stochastic channel pinch-off events were observed, creating quasi-ballistic constrictions with irregular conductance quantization. This epitaxy-free and high mobility oxide material platform offers a promising new route towards patterning quantum devices.

We investigate the interplay of disorder and interaction in two-dimensional electron systems in a strong magnetic field, focusing on the transition between Wigner crystals and fractional quantum Hall liquids. We first study classical Wigner crystals with charged impurities, revealing an evolution from a coherent crystal to local crystalline domains with short-range order and eventually to an amorphous state as impurity concentration increases. We then analyze noninteracting quantum electron crystals created by periodic potentials, showing that their structure factor exhibits both peaks and rings, distinct from classical Wigner crystals. Finally, we explore fractional quantum Hall liquids with random short-range disorder and quenched charged impurities, demonstrating that the ground state can evolve from an incompressible liquid to a localized ordered state and eventually to an amorphous state as disorder strength increases. In general, we find that random charged impurities lead to longer-range crystalline ordering than the short-range random disorder. Our findings highlight the rich interplay between disorder and interaction in quantum Hall systems and provide insights into experimental observations of these phenomena. By qualitative comparison with a recent STM experiment [Nature \textbf{628}, 287 (2024)], we conclude that the 2D system crosses over from an incompressible homogeneous fractional quantum Hall liquid to a generic locally ordered solid and eventually to a disordered amorphous solid at large disorder.

We propose a minimal model starting from a parent Chern band with quartic dispersion that can describe the spin-valley polarized electrons in rhombohedral tetralayer graphene. The interplay between repulsive and attractive interactions on top of that parent Chern band is studied. We conduct standard self-consistent mean-field calculations, and find a rich phase diagram that consists of metal, quantum anomalous Hall crystal, chiral topological superconductor, as well as trivial gapped Bose--Einstein condensate. In particular, there exists a topological phase transition from the chiral superconductor to the Bose--Einstein condensate at zero temperature. Motivated by the recent experimental and theoretical studies of composite Fermi liquid in rhombohedral stacked multilayer graphene, we further generalize the physical electron model to its composite fermion counterpart based on a field theory analysis. The chiral superconductor phase of the composite fermion becomes the nonabelian Moore--Read quantum Hall phase. We argue that a chiral (pseudo-)spin liquid phase can emerge in the vicinity of this Moore--Read quantum Hall phase. Our work suggests rhombohedral multilayer graphene as a potential platform for rich correlated topological phases.

Recent experiments demonstrated that the spin state of individual atoms on surfaces can be quantum-coherently controlled through all-electric electron spin resonance. By constructing interacting arrays of atoms this results in an atomic-scale qubit platform. However, the static exchange coupling between qubits, limited lifetime and polarization of the initial state, impose significant limits on high-fidelity quantum control. We address this issue using open quantum systems simulation and quantum optimal control theory. We demonstrate the conditions under which high-fidelity operations ($\mathcal{F} \gtrsim 0.9$) are feasible in this qubit platform, and show how the Krotov method of quantum optimal control theory adapts to specific noise sources to outperform the conventional Rabi drivings. Finally, we re-examine the experimental setup used in the initial demonstration of this qubit platform and propose optimized experimental designs to maximize gate fidelity in this platform.

That author's affiliation: Wrocław University of Science and Technology Institution (first & last author): Wrocław University of Science and Technology

Decoherence suppression in quantum dots can advance coherent telecom single-photon sources.

That author's affiliation: University of Basel First author institution: University of Copenhagen Last author institution: Niels Bohr Institute, University of Copenhagen

Waveguide-integrated InAs quantum dots produce quantum-coherent emission in the O-band with promising optical characteristics for scalable quantum networks.

That author's affiliation: QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, Netherlands Institution (first & last author): QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, Netherlands

Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction (SOI), enabling efficient electrical control and engineering of spin degrees of freedom. The most advanced Ge/SiGe heterostructures to date, based on compressively strained Ge channels within strain-relaxed silicon-germanium (SiGe) barriers, exhibit weak SOI due to the heavy-hole character of the wave function, posing challenges for spin-based quantum devices and requiring complex device designs for fast qubit manipulation. In this work, we demonstrate that concrete heterostructure modifications can overcome these limitations, enhancing SOI by up to three orders of magnitude. Specifically, we propose to enrich unstrained Ge channels by localized, strained silicon spikes. Leveraging a multi-objective Bayesian optimization, we optimize the spike profile to maximize SOI, while ensuring compatibility with current epitaxial growth processes and robustness against realistic variations of growth parameters. Our heterostructure substantially enhances device performance, yielding up to two orders of magnitude higher quantum-dot spin qubit quality factors than state-of-the-art materials. We also predict GHz-scale spin splittings for hybrid superconducting Andreev spin qubits. These novel Ge heterostructures with engineered Si concentration profiles can open pathways to scalable quantum and spintronic applications.

That author's affiliation: Department of Physics and Astronomy, University of Iowa. Iowa City, IA, USA First author institution: Department of Physics and Astronomy, University of Iowa. Iowa City, IA, USA Last author institution: Applied Mathematical & Computational Sciences, The University of Iowa, Iowa City, Iowa, USA

Solid-state spin defects hold great promise as building blocks for various quantum technologies. Embedding spin centers in $p$-$n$ diodes under reverse bias has proved to be a powerful strategy to narrow the optical linewidth and increase spin coherence, while also enabling control of the photoluminescence wavelength via Stark shift. Given the multitude of parameters influencing spin centers in diodes (e.g., doping densities and profiles, temperature, bias voltage, spin center position), a question that has not yet been answered is: which set of these design parameters maximizes spin center coherence? In this work, we address this question by developing a scaled gradient descent optimization algorithm that minimizes the optical linewidth of spin centers by combining the numerical solution of a diode's Poisson equation with calculated charge noise from the non-depleted regions. Our optimization is performed for both single- and multiple-parameter cases for divacancies in SiC $p$-$i$-$n$ diodes, including reverse-bias voltage, doping density and profile, and diode total length. Importantly, the optimization is subject to realistic physical constraints, such as small operating bias voltages, avoidance of the dielectric breakdown regime and physical thresholds for doping density. Additionally, due to the leakage current at reverse bias voltages, we develop a new formalism to investigate its influence on coherence. We show that the corresponding noise can be mitigated by implanting spin defects away from the diode's surfaces. Our work provides guidance on experimentally relevant diodes for hosting spin centers with the narrowest optical linewidths and longest coherence times.

That author's affiliation: Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, MD 20742, USA First author institution: Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, MD 20742, USA Last author institution: Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, USA

One of the most important physical effects in condensed matter physics is the Rashba spin-orbit coupling (RSOC), introduced in seminal works by Emmanuel Rashba. In this article, we discuss, describe, and review (providing critical perspectives on) the crucial role of RSOC in the currently active research area of topological quantum computation. Most, if not all, of the current experimental topological quantum computing platforms use the idea of Majorana zero modes as the qubit ingredient because of their non-Abelian anyonic property of having an intrinsic quantum degeneracy, which enables nonlocal encoding protected by a topological energy gap. It turns out that RSOC is a crucial ingredient in producing a low-dimensional topological superconductor in the laboratory, and such topological superconductors naturally have isolated localized midgap Majorana zero modes. In addition, increasing the RSOC strength enhances the topological gap, thus enhancing the topological immunity of the qubits to decoherence. Thus, Rashba's classic work on SOC may lead not only to the realization of localized non-Abelian anyons, but also fault tolerant quantum computation.

That author's affiliation: Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Krakow, Poland Institution (first & last author): Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Krakow, Poland

We explore the emergence of topological phases in moir\'{e} MoTe$_2$/WSe$_2$ bilayer, highlighting the crucial role of spin-orbit coupling and Coulomb interactions at two holes per moir\'e unit cell \(v = 2\). Our analysis uncovers robust Quantum Valley Hall Insulating (QVHI) phase and reveals that long-range interactions alone can mediate the interlayer electron tunneling, generating topologically nontrivial bands even in the absence of the corresponding single-particle hopping. Additionally, we show that in the case of band mixing terms originating both from the interaction and single particle physics a competition between topological states realizing $s$-$wave$ and $p\pm ip$-$wave$ symmetries can appear. Moreover, within the considered theoretical framework, we present that by introducing a small Zeeman field, one can lift the band inversion in one of the valleys. This leads to a Quantum Anomalous Hall Insulating (QAHI) state with the topological gap opening in a single valley and the other being topologically trivial.

That author's affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore Institution (first & last author): School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore

Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires low photon-loss rates and qubits with tunable electric dipole moments that couple strongly to the resonator's electric field while maintaining long coherence times. For spin qubits, spin-photon coupling is typically achieved via spin-charge hybridization. However, this introduces a fundamental trade-off: a large spin-charge admixture enhances the coupling strength, which boosts readout and resonator-mediated gate speeds, but exposes the qubit to increased decoherence, thereby increasing the threshold required for strong coupling and limiting the time available for accurate state measurement. This makes it essential to identify optimal operating points for each qubit platform. We address this for the donor-based flip-flop qubit, whose microwave-controllable electron-nuclear spin states make it suitable for coupling to microwave resonators. We demonstrate that, by choosing intermediate tunnel couplings that balance strong interaction with long qubit lifetimes, high-fidelity readout and strong coupling are simultaneously achievable. We also map out the respective charge-photon couplings and photon-loss rates required. Furthermore, we show that experimental constraints on charge-photon coupling and photon loss can be mitigated using squeezed input fields. As similar trade-offs appear in quantum-dot-based qubits, our methods and insights extend naturally to these platforms, offering a potential route toward scalable architectures.

That author's affiliation: Department of Applied Physics and Physics, Yale University, New Haven, CT 06520, USA Institution (first & last author): Department of Applied Physics and Physics, Yale University, New Haven, CT 06520, USA

Dissipative tunneling remains a cornerstone effect in quantum mechanics. In chemistry, it plays a crucial role in governing the rates of chemical reactions, often modeled as the motion along the reaction coordinate from one potential well to another. The relative positions of energy levels in these wells strongly influence the reaction dynamics. Chemical research will benefit from a fully adjustable, asymmetric double-well equipped with precise measurement capabilities of the tunneling rates. In this paper, we show a quantum simulator system that consists of a continuously driven Kerr parametric oscillator with a third order non-linearity that can be operated in the quantum regime to create a fully tunable asymmetric double-well. Our experiment leverages a low-noise, all-microwave control system with a high-efficiency readout, based on a tunnel Josephson junction circuit, of the which-well information. We explore the reaction rates across the landscape of tunneling resonances in parameter space. We uncover two new and counter-intuitive effects: (i) a weak asymmetry can significantly decrease the activation rates, even though the well in which the system is initialized is made shallower, and (ii) the width of the tunneling resonances alternates between narrow and broad lines as a function of the well depth and asymmetry. We predict by numerical simulations that both effects will also manifest themselves in ordinary chemical double-well systems in the quantum regime. Our work is a first step for the development of analog molecule simulators of proton transfer reactions based on quantum parametric processes.

We theoretically demonstrate a practical method for tuning randomly disordered 2D quantum-dot grids underlying spin qubit platforms using vision-based neural networks trained on tensor-network generated charge-stability data. We show that a simulatable local $3\times 3$ window already contains sufficient information to tune the central dot within a much larger array, thereby validating a sliding-window approach in which one tunes a local region and then translates that window across the lattice to calibrate a larger device. This avoids the computationally intractable necessity for obtaining the ground states for large systems with exponentially large Hilbert space. For the experimentally relevant case where only the on-site disorder is unknown, the neural network predicts the relevant parameters with very high fidelity in the $3\times 3$ setting [$R^2 >0.99$], and after fine tuning on only a small number of larger-device samples, it retains high accuracy for the central dot of a $5\times 5$ plaquette [$R^2\approx 0.98$]. When all the dots parameters are treated as unknown, prediction of the on-site disorder remains robust [$R^2>0.9$ for both $3\times 3$ and $5\times 5$], although the remaining parameters are substantially more difficult to infer from the same charge-stability data. This shows that the most practically important disorder parameter for tuning can still be inferred reliably even in the fully disordered setting for the computationally difficult 5x5 arrays.

That author's affiliation: Forschungszentrum Jülich Institution (first & last author): Forschungszentrum Jülich

Hybrid superconductor-topological insulator (TI) nanostructures constitute a promising materials platform for exploring proximity-induced superconductivity in systems with topologically protected surface states. A key obstacle has been the realization of clean and well-controlled superconductor-TI interfaces, as TI surfaces rapidly degrade under ambient conditions. Here, we introduce a fully in situ, multi-angle stencil lithography technique that enables the fabrication of proximitized charge islands in TIs. The approach combines selective-area growth of (Bi,Sb)$_2$Te$_3$ nanoribbons with angle-controlled deposition of diffusion barriers, superconducting Al, and ultrathin oxide tunnel barriers, allowing scalable fabrication of hybrid nanostructures without post-growth processing. Low-temperature transport measurements reveal robust Coulomb blockade and a pronounced suppression of low-energy conductance which vanishes with magnetic field, consistent with proximity-induced superconductivity in the island. These results establish a versatile nanofabrication platform that enables access to previously unexplored TI-based hybrid quantum devices and opens new routes for investigating superconductivity in topological nanostructures.

Magnetic domain walls have long been pursued as carriers of classical information for storage and processing. With the ability to create, control, and probe domain walls at the nanoscale, they are recently recognized as an ideal platform for studying macroscopic quantum effects and provide a natural blueprint for building scalable quantum computing architectures. In particular, the experimentally demonstrated high mobility of domain walls makes them not only suitable as stationary qubits but also as flying qubits, which may offer advantages over currently explored quantum computing platforms. In this Perspective, we outline our current understanding of the essential ingredients and key requirements for realizing universal quantum computation based on magnetic domain walls. We highlight promising concrete material platforms and identify the experiments that are still needed to advance this concept. We also discuss the potential challenges and point to new opportunities in this emerging research direction at the interface between magnetism and quantum information science.

The Josephson diode effect (JDE) has attracted significant attention for enabling directional, dissipationless supercurrents, positioning Josephson junctions as promising building blocks for next-generation quantum devices. Hybrid semiconductor-superconductor nanowires provide an experimentally accessible platform for realizing the JDE and hosting Majorana bound states. However, most theoretical treatments assume the single-channel limit, whereas realistic nanowire devices are inherently multichannel due to transverse confinement. Here, we investigate the JDE in multichannel Rashba nanowire Josephson junctions, focusing on the role of inter-subband coupling. We show that subband hybridization qualitatively modifies both the topological phase diagram and the JDE response of the device. In contrast to the single-channel case, the topological phase is confined to a finite window of Zeeman fields, within which Majorana bound states strongly enhance the diode efficiency. Inter-subband coupling also enables a finite JDE even when the Zeeman field is aligned along the spin-orbit direction -- a mechanism absent in independent-channel and strictly one-dimensional nanowire systems. Furthermore, inter-subband coupling enhances spectral asymmetry and significantly increases the diode efficiency compared to single-channel junctions. These results identify inter-subband hybridization as a key ingredient for realizing and optimizing nonreciprocal superconducting transport in experimentally relevant hybrid nanowire Josephson junctions.

We propose a cavity-based scheme that uses photonic chirality to control braiding and read out non-Abelian anyons in a fractional quantum Hall platform. Counter-propagating cavity modes interfere with a classical reference tone to create a rotating pinning landscape whose direction is set by photon circulation, so that opposite photonic branches drive opposite anyon loops. This realizes a branch-conditioned braid operation and maps the resulting braid response onto cavity intermode coherence. We derive the rotating pinning term and the readout relation at the effective-theory level, identify an operating window set by subgap driving, adiabatic transport, localization, and cavity coherence, and provide phenomenological diagnostics of transport locking. In the minimal four-anyon Ising realization, the leading signal reduces to a calibrated phase; more generally, the same readout structure becomes state dependent when the relative braid operator is non-scalar. The scheme provides a cavity route to braid-sensitive readout of non-Abelian anyons without relying on fragile electronic interference fringes.

Recent experiments on a range of engineered quantum systems have highlighted the important role of interacting two-level systems (TLSs) in modifying device properties and generating fluctuations. Focusing on the case of an oscillator coupled to a single near-resonant TLS, we explore how interactions between the TLS and lower-frequency thermally activated two-level fluctuators (TLFs) degrade the oscillator's coherence. Depending on the strength of the couplings, a single TLF can give rise to coherence oscillations that appear alongside, or supplant, Rabi oscillations of the oscillator-TLS system. Bath-driven transitions in the TLF cause irreversible coherence decay at a rate that is highly sensitive to both the couplings and the transition rate. For an ensemble of TLFs, we identify and characterise the different regimes of non-exponential phase-averaging-driven coherence decay that the oscillator can display. Using numerical calculations, we examine the extent to which systems with just a few TLFs differ from the limit of a large (continuum) TLF ensemble. Our work provides a theoretical framework for understanding the interplay of coherent TLS interactions and TLF-induced dephasing in quantum devices such as superconducting and phononic resonators.

The design of polarization-encoded quantum interfaces relies on the assumption that solid-state emitters possess static transition dipoles defined by the host lattice symmetry. Here, we demonstrate that the transition dipole moment of single hexagonal boron nitride quantum emitters is not a static property but rotates as a function of photon energy. Through high-resolution energy-resolved spectroscopy, we reveal a continuous rotation of the emission dipole orientation reaching up to $40^{\circ}$ across the vibronic manifold at room temperature, driven by coupling to the phonon bath. This spectral rotation is effectively suppressed at cryogenic temperatures (6 K), where the acoustic phonon population is negligible, identifying thermally activated lattice vibrations as the primary driver of the reorientation. First-principles calculations on two representative defects spanning weak and strong electron-phonon coupling regimes confirm that phonon-displaced geometries produce a systematic deviation of the transition dipole orientation from the zero-phonon line, with the magnitude scaling with vibronic coupling strength. The experimental observations and calculations demonstrate that single quantum emitters can operate beyond the Condon approximation, with the transition dipole acquiring a dependence on the instantaneous nuclear configuration. Our results identify a fundamental limit for polarization fidelity in solid-state quantum networks and connect solid-state single-emitter physics to a class of effects previously accessible only in ensemble measurements in molecular and biological spectroscopy.

Distributed quantum inner product estimation with structured random circuits

Two-qubit gates using on-demand single-photons from ordered shape and size controlled large-volume superradiant quantum dots

Singlet-only always-on gapless exchange (SAGE) spin qubits are an alternative type of exchange-only (EO) qubits that encode a single qubit in the spins of four electrons located in four tunnel-coupled quantum dots. While conventional EO qubits are susceptible to local magnetic field gradients caused by local nuclear environments and $g$-factor variations, the SAGE qubit subspace is inherently protected from magnetic-gradient-induced Pauli errors by virtue of the singlet-only encoding, which is invariant under magnetic field gradients, and the always-on exchange couplings, which provide energetic leakage protection. However, the always-on operation simultaneously increases the qubit's sensitivity to charge noise. Here, starting from a Hubbard model describing the underlying electronic structure of the coupled quantum dots, we characterize the performance of SAGE qubits in the presence of $1/f$ charge noise that induces fluctuations in both the dot chemical potentials and the interdot tunnel couplings. We calculate SAGE idle coherence times and show that realistic CPMG-like pulse sequences can be used to significantly extend SAGE single-qubit coherence times for experimentally relevant charge noise strengths. We likewise study the fidelity of SAGE two-qubit gates in the presence of charge and magnetic noise and again propose a simple refocusing strategy to mitigate the noise, while increased ramp times of the entangling pulse suppress leakage into noncomputational states.

The landscape of condensed matter physics is facing an unprecedented data surge driven by high-throughput ab initio workflows and rapidly expanding experimental datasets. Traditional first-principles methods such as Density Functional Theory (DFT), despite their foundational role, suffer from cubic scaling, creating a major bottleneck when exploring the vast chemical space of quantum materials. This review analyzes how Machine Learning (ML) and Deep Learning (DL) are overcoming these limitations and accelerating the discovery of exotic phases of matter. We examine the shift from rigid descriptor-based models to flexible, symmetry-aware architectures, particularly E(3)-equivariant Graph Neural Networks (GNNs) that respect rotational and translational invariance. A central focus is the automated identification of topological phases, where ML models exploit symmetry indicators and elementary band representations to diagnose non-trivial topology without costly band structure integrations. The discussion culminates in a case study of the Altermagnet, a recently identified third class of magnetism beyond the ferromagnetic, antiferromagnetic dichotomy. We highlight how specialized AI search engines, combining graph theory with crystallographic symmetry analysis, have uncovered d-wave, g-wave, and even i-wave altermagnets, expanding the known landscape of magnetic order. The review concludes by addressing the interpretability gap and advocates for symbolic regression and active-learning frameworks to connect black-box predictions with experimentally verifiable mechanisms.

Quantum technologies promise a radically new way to solve classically intractable computing problems. Superconducting circuits as a platform are at the forefront of this field. The cryogenic operation temperatures of superconducting circuits however impose challenges for the further scaling to many connected quantum information processing units into a local area or global network. In this work, we present a hardware solution for connecting quantum devices operating at microwave frequencies into local area networks, which enable the exchange of quantum information between spatially separated parties. Specifically, we demonstrate a modular system spanning distances of 5, 10 and 30 meters operated at cryogenic temperatures and connecting two superconducting circuit systems, located in individual dilution refrigerators, through a quantum communication channel. We develop a thermal model to evaluate the heat transfer processes in the setup, optimize the design and select appropriate materials for its construction. The assembled 30-meter-long system achieves operating temperatures of below 50 mK after a cooldown time of about six and a half days. This link enables the execution of distributed quantum computing and communication algorithms. It also adds the resource of non-locality, certified by a loophole-free Bell test, to the field of quantum science and technology with superconducting circuits.

Mechanical resonators operating in the megahertz range have become a versatile platform for fundamental and applied quantum research. Their exceptional properties, such as low mass and high quality factor, make them also appealing for force sensing experiments. In this work, we propose a method for detecting, and ultimately controlling, nuclear spins by coupling them to megahertz resonators via a magnetic field gradient. Dynamical backaction between the sensor and an ensemble of $N$ nuclear spins produces a shift in the sensor's resonance frequency. The mean frequency shift due to the Boltzmann polarization is challenging to measure in nanoscale sample volumes. Here, we show that the fluctuating polarization of the spin ensemble results in a measurable increase of the resonator's frequency variance. On the basis of analytical as well as numerical results, we predict that the variance measurement will allow single nuclear spin detection with existing resonator devices.

We present a theory of ballistic N/F/S and S/F/S junctions with a uniformly precessing magnetization, which generates long-range equal-spin superconducting correlations [Takahashi et al., Phys. Rev. Lett. 99, 057003 (2007), Houzet, Phys. Rev. Lett. 101, 057009 (2008)]. The non-equilibrium distribution of Andreev bound states leads to a strongly non-sinusoidal current-phase relationship for large precession angles. We derive detailed results for ballistic junctions involving partially and fully polarized ferromagnets. In the fully polarized half-metal limit, the magnetization precession switches the junction from an "off" state with vanishing subgap current to an "on" state with finite Andreev conductance and finite Josephson current.

We theoretically study the direct and inverse spin Hall effects in a superconductor-normal metal-superconductor junction induced by a spin-orbit interaction that is invariant under spatial inversion. We show that a supercurrent induces a spin Hall effect, leading to a static spin accumulation with opposite polarizations at the two edges, analogous to that in normal conductors. For the inverse effect, we consider a spatially inhomogeneous static magnetic field and show that it induces an anomalous phase shift, which, in the presence of higher harmonics, results in a diode effect. Unlike Rashba systems, the present mechanism does not require broken structural inversion symmetry.

Utilization of Faraday rotation (FR) properties of topological materials offers a promising route toward novel magneto-optical devices. We systematically investigated the effect of Rashba spin-orbit coupling (SOC) on FR spectra in an extended Haldane model, which incorporates Rashba SOC and exchange splitting into the original spinless Haldane framework. Using the Kubo formalism, we calculated the FR spectra across the model's rich topological phase diagram. We found that in the Chern number C=2 region, in the absence of exchange splitting, the FR angle can exceed 4$^\circ$ and its peak position is tunable by the Rashba SOC. In contrast, with the inclusion of exchange splitting, a nearly flat FR profile emerges over a broad frequency range, and the FR peak values increase monotonically with the Rashba SOC strength. The Rashba SOC opens additional transition channels, whose net contribution constructively enhances the FR peak. Furthermore, we derived a low-energy effective Hamiltonian expanded up to quadratic terms, the results of which are in good agreement with tight-binding model calculations, thereby validating our numerical results. Our findings suggest that magneto-optical device characteristics can be designed and optimized through Rashba SOC engineering.

Phononic silicon structures have emerged as an integrable and scalable nanosystem for tailoring thermal transport. However, their widespread adoption has been limited by their complex fabrication pathways. Alongside, the reliable characterization of thermal properties in suspended nanostructured films remains challenging, as thermal contact resistances often hinder the accuracy of measurements. In this work, we demonstrate a clear and controllable reduction of thermal conductivity in nanopatterned silicon membranes. A block copolymer self-assembly approach is employed to fabricate nanoholed silicon films with a pitch of 63 nm and hole diameters of 35 nm. Additionally, we introduce an extension of the three-probe technique that enables robust, quantitative, and spatially resolved thermal conductivity measurements in complex thin-film systems, accounting for thermal contact artifacts. The method is validated through measurements on unpatterned 40 nm-thick silicon thin films between 30 and 350 K, yielding a room-temperature thermal conductivity of 46.5 W/m.K. Finally, we further show that controlled etching of the nanoholes provides a powerful means to tune thermal transport in the overall studied temperature range, establishing hole etch depth control as an effective parameter in phononic silicon. Specifically, a fivefold reduction in thermal conductivity is achieved, reaching 7.3 W/m.K for fully etched-through membranes at room temperature.

Quantum dot based platforms offer a promising route towards realizing the Kitaev chain Hamiltonian hosting Majorana bound states (MBSs). Poor man's MBSs arise in a two-site Kitaev chain when the parameters of the system are fine-tuned to the sweet spot. Based on our previous work [Phys. Rev. B 111, 155410 (2025)], we consider a microscopic model for the Kitaev chain based on quantum dots with proximity effect embedded in a photonic cavity. We find that the photon coupling in the microscopic model yields an effective Hamiltonian where the cavity affects the pairing term. However, we demonstrate that even in this case, it is possible to screen particle interactions and reach the sweet spot condition for the emergence of the poor man's MBSs. In particular, we find that attractive particle interactions can be canceled for the cavity prepared in the zero-photon state, while repulsive ones can be screened with a cavity prepared in the one-photon state. Furthermore, in case of a large number of photons in the cavity, we find that the hopping amplitudes are suppressed resulting in a degenerate spectrum. This motivates the use of quantum light for engineering poor man's MBSs with cavity embedding.

We propose a Hanbury Brown-Twiss interferometer for a $\nu=2/5$ fractional quantum Hall edge system, in which quasiparticles tunnel between two co-propagating edge modes. In contrast to the previously studied anyonic Fabry-P\'{e}rot and Mach-Zehnder interferometers, the proposed setup relies purely on two-particle interference rather than single-particle interference. In the weak-tunneling regime, we employ a bosonized edge theory together with Keldysh perturbation theory to evaluate the cross-correlation of the tunneling currents. In the large-device limit, we obtain an analytic expression for the flux-dependent noise, whose structure closely resembles that of an electronic HBT interferometer, but with the electron charge replaced by the fractional charge $e^{\star}=e/3$ and with scaling dimensions characteristic of the fractional edge modes. In this limit, the explicit anyonic exchange phases cancel, whereas when the device size becomes comparable to the thermal length, the cross-correlation may recover a more explicit dependence on the anyonic statistical angle.

Over the last decade, the development of Josephson devices based on van der Waals (vdW) materials has advanced rapidly, representing a paradigm shift driven by the advent of 2D materials. The diverse vdW materials library, combined with advanced fabrication techniques, enables the integration of materials with vastly disparate properties for scientific exploration. The vdW Josephson junctions (JJs) offer a unique route to explore novel functionalities and associated physics that remain inaccessible in conventional JJs, which have reached an industrial level in terms of fabrication. Beyond material diversity, vdW crystalline materials offer fundamental new control over device symmetries, enabling the realization of Hamiltonians unique to 2D systems. Furthermore, the long relaxation times of myriad excitations in 2D heterostructures open possibilities for creating exquisite quantum sensors, with the 2D material itself acting as an efficient bus for transmitting excitations to the active sensing element. This creative explosion in vdW-based superconducting electronics is rapidly growing, and our review highlights the resulting devices and physics. The confluence of vdW JJs with twistronics and topology has the potential to redefine superconducting quantum technology, enabling applications from quantum computation to ultra-sensitive hybrid sensors. While opportunities abound with vdW JJs, the challenge of scalability must be surmounted for translation into real-world devices. This review synthesizes current developments and offers a roadmap for researchers navigating this burgeoning field.

We explore the expected performance of a semiconducting spin cQED quantum processor for Multiple Hypothesis Tracking (MHT) algorithm via a quantum annealing procedure. From two different benchmarking scenarios we evaluate this type of quantum annealer on a quantum emulator in which we incorporated both dynamical coherent errors and incoherent errors. From estimate of the reset, measurement and annealing time of the processor, we find that cQED-spin processors could reach a total run time of around 50 ms. This makes this technology promising for potential real time application such as radar tracking.

The nitrogen-vacancy (NV) center in diamond enables optical initialization and readout of its electronic spin, forming the basis of a wide range of quantum sensing and metrology applications. A central challenge in such measurements is the coexistence of two charge states, NV- and NV0: While detection protocols rely on the spin-dependent properties of NV-, fluorescence from NV0 does not carry useful contrast and is typically removed as background, reducing the available signal. Here, we show that the origin of NV0 emission depends strongly on the excitation wavelength in nitrogen-containing diamond. Using ensembles of NV centers with varying nitrogen concentrations, we compare excitation at the NV0 zero-phonon line (ZPL) at 575 nm with the commonly used 532 nm. We find that excitation at 575 nm generates NV0 predominantly through spin-selective tunneling from the excited state of NV- to nearby nitrogen donors, such that the NV0 emission follows the spin polarization of NV-. As a result, the NV0 fluorescence contributes to the measurable spin contrast, allowing the full fluorescence signal to be used for detection. This result opens opportunities for improved sensitivity in NV-based sensing applications.

Tuning of gate-defined semiconductor quantum dots (QDs) is a major bottleneck for scaling spin qubit technologies. We present a deep learning (DL) driven, semantic-segmentation pipeline that performs charge auto-tuning by locating transition lines in full charge stability diagrams (CSDs) and returns gate voltage targets for the single charge regime. We assemble and manually annotate a large, heterogeneous dataset of 1015 experimental CSDs measured from silicon QD devices, spanning nine design geometries, multiple wafers, and fabrication runs. A U-Net style convolutional neural network (CNN) with a MobileNetV2 encoder is trained and validated through five-fold group cross validation. Our model achieves an overall offline tuning success of 80.0% in locating the single-charge regime, with peak performance exceeding 88% for some designs. We analyze dominant failure modes and propose targeted mitigations. Finally, wide-range diagram segmentation also naturally enables scalable physic-based feature extraction that can feed back to fabrication and design workflows and outline a roadmap for real-time integration in a cryogenic wafer prober. Overall, our results show that neural network (NN) based wide-diagram segmentation is a practical step toward automated, high-throughput charge tuning for silicon QD qubits.

Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different materials platforms, the question of how to handle areas of low valley splitting in silicon during shuttling remains unresolved. In this work, we explore the possibility of utilizing the valley degree of freedom, particularly in regions of low valley splitting, to allow mobile spin qubits to be shuttled through an occupied stationary quantum dot, thereby leapfrogging over the stationary electron. This not only grants a more enriched mobility for shuttled electrons, as it opens new possible routing paths, but also enables the implementation of an entangling SWAP$^\gamma$ two-qubit gate operation in the process. Simulating this process for different sets of parameters, we demonstrate the feasibility of such an operation and offer a unique use case for otherwise precarious regions of a quantum processor chip and propose a possible extension to the set of possible operations for silicon spin qubit devices.

Kitaev chains realized in quantum dots coupled via superconducting segments provide a controllable platform for engineering Majorana zero modes (MZMs). In these systems, subgap states in the hybrid region mediate the effective coupling between quantum dots and determine the emergence of sweet-spots where MZMs are strongly localized. However, existing minimal treatments often oversimplify the mesoscopic hybrid region. We perform a full microscopic treatment of this hybrid segment, capturing the quasiparticle continuum and spin-split Andreev bound states (ABSs), and show that it fundamentally alters the minimal picture. We derive analytical expressions for the renormalized couplings and sweet-spot conditions, establishing a direct link between microscopic chain parameters and Majorana optimization and identifying experimentally relevant regimes for improved device performance. Critically, we find that parity-crossings of the ABS, marking the onset of an odd-parity spin-polarized regime in the segment, identify the optimal operating windows where MZMs are simultaneously well localized with a large gap to excited states.

Spin qubits have emerged as a leading platform for quantum information processing due to their long coherence times, small footprint, and compatibility with the existing semiconductor industry. We first provide an introduction to the different qubit implementations currently being investigated, including single electron-spin qubits, hole-spin qubits, donor qubits, and multispin encodings. We discuss how the confinement and strain present in semiconductor heterostructures produce addressable levels whose spin degree of freedom can be used to encode a qubit. A large emphasis is placed on reviewing the theoretical foundations and recent experimental demonstrations of proposed mechanisms for long-range coupling, including hybrid approaches based on circuit QED and Andreev qubits, as well as spin shuttling. Finally, we review a recent proposal for linking spin qubits using topological spin textures.

We study $\mathbb{Z}_3$-symmetric Rabi model that describes a three-level system coupled to two bosonic modes. We derive a mapping of the two-mode $\mathbb{Z}_3$ Rabi model onto a qubit-boson ring. This mapping allows us to formulate a realistic implementation of the $\mathbb{Z}_3$ Rabi model based on superconducting qubits. It also provides context for the previously proposed optomechanical implementation of the $\mathbb{Z}_3$ Rabi model. In addition, we propose a physical implementation of the $\mathbb{Z}_3$ Potts model via a coupled chain of $\mathbb{Z}_3$ Rabi models.

The advent of van der Waals (vdW) heterostructures has enabled formation of bespoke materials with atomic precision, where numerous quantum and topological phenomena have already been discovered. This atomic-layer tunability, however, comes at a cost: individual 2D layers must be picked up, moved, and placed in a deterministic manner while keeping their interfaces atomically clean. Recent advances in machine learning and robotics place even stronger emphasis on the deterministic aspect of vdW assembly. Current polymer-based transfer methods satisfy neither the determinism nor cleanliness requirements. To this end, solutions are needed where adhesion can be dynamically and deterministically controlled without leaving organic contamination. Here, we present a polymer free transfer technique employing thin muscovite (mica) crystals. Temperature control over mica adhesion enables deterministic pick-up, stacking, and release of 2D materials, while their crystalline, inorganic nature ensures pristine interfaces and suppresses strain. Fully compatible with existing fabrication workflows, this approach enables the assembly of demanding vdW heterostructures, including those with exposed conductive layers, moir\'e superlattices and suspended membranes. Our method represents a promising strategy for vdW heterostructure fabrication toward its automatization.

We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate regime, bias spectroscopy shows regular Coulomb-blockade diamonds characteristic of single-dot transport. As backgate is increased, additional low-bias structure develops beyond a simple single-dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher-backgate regime, plunger-gate tuning and two-gate measurements establish a gate-reconfigurable double-dot configuration with two non-equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe2 supports electrically reconfigurable single- and double-dot transport in the present device architecture.

The convergence of iterative schemes to achieve self-consistency in mean field problems such as the Schr\"odinger-Poisson equation is notoriously capricious. It is particularly difficult in regimes where the non-linearities are strong such as when an electron gas in partially depleted or in presence of a large magnetic field. Here, we address this problem by mapping the self-consistent quantum-electrostatic problem onto a Non-Linear Helmoltz (NLH) equation at the cost of a small error. The NLH equation is a generalization of the Thomas-Fermi approximation. We show that one can build iterative schemes that are provably convergent by constructing a convex functional whose minimum is the seeked solution of the NLH problem. In a second step, the approximation is lifted and the exact solution of the initial problem found by iteratively updating the NLH problem until convergence. We show empirically that convergence is achieved in a handfull, typically one or two, iterations. Our set of algorithms provide a robust, precise and fast scheme for studying the effect of electrostatics in quantum nanoelectronic devices.

Valley degrees of freedom are a promising resource for solid-state quantum information. However, traditional architectures rely on engineered valley energy splitting in semiconductors to utilize the valley degree of freedom as an information carrier, an approach not naturally available in the gapless, energetically degenerate valleys of Dirac and Weyl materials. In this work, we demonstrate electrostatic control of valley-dependent phase in tilted Dirac/Weyl semimetals. The presented scheme utilizes the tilted energy dispersion of Dirac/Weyl cones separated in momentum space. By routing wave-packets through a shaped electrostatic barrier, the valley-dependent tilt induces differential spatial drift and dwell times, accumulating a continuously tunable relative dynamical phase. Because the two valleys' propagation diverges transversely due to the tilt velocity in the absence of the potential barrier, the gate is defined relative to the corresponding zero-barrier evolution, so the barrier acts as a valley-diagonal phase element within the transported reference basis. Time-dependent transport simulations demonstrate electrically tunable relative phases (including $\pi/4$, $\pi/2$, and $\pi$ targets) operating on equal-energy valleys, with good mode preservation, and high transmission probability ($T_{K,K'} \approx 1$). Furthermore, we identify coherent deviation from the transported reference modes as the primary mechanism that limits ideal behavior at higher barrier heights. This work isolates a transport-based route to coherent $Z$-type valley phase control driven purely by relativistic transport dynamics.

Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing techniques offer a promising solution by enabling sequential programming of several gate voltages using a limited number of input lines. However, the compatibility of such dynamic voltage refreshing with the stringent stability, noise, and speed requirements of quantum dot operation is an active subject of study. Here we experimentally demonstrate that a multiplexing cryo-CMOS circuit can reliably bias a silicon double quantum dot (DQD) at 0.5K. Exploiting the isolated regime, we show deterministic loading and isolation of four electrons and stable access to all five charge configurations from (4,0) to (0,4), despite the sequential voltage refreshing. We further demonstrate rapid voltage pulsing across an inter-dot transition, resolving single-electron tunneling events and stochastic switching at the (1,3)-(0,4) transition. These results confirm that SH-based multiplexed control is compatible with both static biasing and pulsing of isolated quantum dots, representing an important milestone toward scalable cryogenic control architectures for large-scale spin-qubit processors.

We propose a neural network-based model capable of learning the broad landscape of working regimes in quantum dot simulators, and using this knowledge to autotune these devices - based on transport measurements - toward obtaining Majorana modes in the structure. The model is trained in an unsupervised manner on synthetic data in the form of conductance maps, using a physics-informed loss that incorporates key properties of Majorana zero modes. We show that, with appropriate training, a deep vision-transformer network can efficiently memorize relation between Hamiltonian parameters and structures on conductance maps and use it to propose parameters update for a quantum dot chain that drive the system toward topological phase. Starting from a broad range of initial detunings in parameter space, a single update step is sufficient to generate nontrivial zero modes. Moreover, by enabling an iterative tuning procedure - where the system acquires updated conductance maps at each step - we demonstrate that the method can address a much larger region of the parameter space.

Sondheimer oscillations (SO) are magnetoresistance oscillations occurring in thin films due to the commensurability between cyclotron motion and sample thickness, and are traditionally regarded as a purely semiclassical size effect. Here we develop a general quantum theory of SO for thin-film conductors in the quantum limit of a large magnetic field. We show that corrections arising from band topology modify the SO frequency, in contrast to Shubnikov-de Haas oscillations where topological information appears only in the phase. As a consequence, quantum SO provide a direct and robust probe of the full Landau level spectrum. Applying our framework to a minimal model with tunable Berry phase, we demonstrate how topology manifests itself in experimentally accessible magneto-oscillation spectra and discuss damping mechanisms including surface roughness.

Topological superconductors (TSCs) in superconducting hybrid heterostructures, which integrate superconducting and non-superconducting materials, have been intensely investigated with the hope of discovering exotic non-Abelian anyons for fault-tolerant quantum computing. In this effort, a challenge for hybrid superconducting systems is controlling hybridization, which is often a balance between enhancing the superconducting proximity effect at the cost of suppressing desirable electronic properties such as strong spin-orbit interactions. Hence, discovering hybrid superconducting systems with topological properties controlled and enhanced by material geometry design without spin-orbit interactions would be intriguing to explore. In this work, we theoretically study a square superconducting network decorated with spin-polarized magnetic adatoms. We find that localized Yu-Shiba-Rusinov bound states at magnetic adatom sites collectively form a weak topological superconducting phase despite the absence of spin-orbit interactions. We then demonstrate that by tuning the Fermi energy of the network, the system can transition from a weak TSC phase to a bulk-dissociated TSC phase where the edge state bands separate from the bulk, giving rise to unexpected features such as nodal lines and co-existing bulk-dissociated edge and corner modes. Moreover, our findings highlight how hetero-dimensional superconducting metamaterials can serve as a useful template for controlling the coupling and dissociation between electronic degrees of freedom of different dimensionalities.

Low-frequency charge noise induced by fluctuating electrostatic disorder is a major limitation for semiconductor hole spin qubits. Here, we analyze the quasistatic response of a hole spin qubit to individual two-level fluctuators (TLFs). We show that, due to the anisotropy of the g-tensor, the qubit response depends on the geometry of the fluctuator-induced dipolar perturbation. We then propose a readout protocol that isolates selected g-tensor components through an accumulated Berry phase and estimate, within our readout model, an order-unity signal-to-noise ratio with a total protocol time in the tens of microseconds. Finally, using microscopic simulations, we compute the quantum Fisher information (QFI) to identify magnetic field directions and confinement regimes in which the qubit is most sensitive to disorder-induced variations of selected g-tensor components.

Overcoming the limitations of current nanofabrication techniques to achieve nanoscale feature sizes is essential for achieving new regimes of light-matter interactions at extreme frequencies and length scales. Here, we demonstrate a scalable nanofabrication platform capable of producing in-plane feature sizes down to 1.75 nm, pushing the boundaries of current top-down nanofabrication techniques. Using precise thickness control of atomic layer deposition (ALD) and employing widely spaced oxide nanofins, we transform conventional ALD into a surface structuring method that produces nanolaminates with sub-10 nm periodicities over large areas. The resulting nanostructures can be used as a one-dimensional gate array to control charge carriers in two-dimensional materials. As an initial demonstration, we integrate the platform with graphene and perform electron transport measurements. In the presence of the gate array enabled by the nanolaminate, we observe satellite Dirac peaks consistent with band-structure modulation, suggestive of quantum-confinement effects. Our platform paves the way for exploring previously inaccessible regimes of nanoscale light-matter interactions, holding significant promise for applications in short wavelength optics, electronics, and polaritonics.